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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD103 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) *High Power Dissipation: PC= 25W(Max)@TC=25 Complement to Type 2SB503 APPLICATIONS *Designed for audio power amplifier, power switching, DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IE IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage w w scs .i w VALUE 80 50 10 3 -3 1 25 150 -65~150 UNIT V .cn mi e V V A A A Collector Current-Continuous Emitter Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature PC TJ Tstg W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 100mA; IB= 0 IC= 10mA; IE= 0 IE= 10mA; IC= 0 IC= 3A; IB= 0.3A B 2SD103 MIN 50 80 10 TYP. MAX UNIT V V V 1.0 1.5 1.0 20 200 300 V V V A A IC= 3A; IB= 0.3A B Current-Gain--Bandwidth Product Output Capacitance w w w. .cn mi cse is IC= 0.5A; VCE= 5V VCB= 50V; IE= 0 VEB= 10V; IC= 0 IC= 0.5A; VCE= 5V 30 IC= 2.5A; VCE= 5V 15 IE= -0.5A; VCE= 10V IE= 0; VCB= 10V; f= 1MHz 1 200 MHz pF isc Websitewww.iscsemi.cn |
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